? semiconductor components industries, llc, 2016 may, 2016 ? rev. 0 1 publication order number: ngtb75n65fl2wa/d NGTB75N65FL2WAG igbt - field stop ii / 4 lead this insulated gate bipolar transistor (igbt) features a robust and cost effective field stop ii trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. in addition, this new device is packaged in a to?247?4l package that provides significant reduction in e on losses compared to standard t o?247?3l package. the igbt is well suited for ups and solar applications. incorporated into the device is a soft and fast co?packaged free wheeling diode with a low forward voltage. features ? extremely efficient trench with field stop technology ? t jmax = 175 c ? improved gate control lowers switching losses ? separate emitter drive pin ? to?247?4l for minimal e on losses ? optimized for high speed switching ? these are pb?free devices typical applications ? solar inverter ? uninterruptible power inverter supplies (ups) ? neutral point clamp topology absolute maximum ratings rating symbol value unit collector?emitter voltage v ces 650 v collector current @ t c = 25 c @ t c = 100 c i c 200 75 a diode forward current @ t c = 25 c @ t c = 100 c i f 200 75 a diode pulsed current t pulse limited by t j max i fm 200 a pulsed collector current, t pulse limited by t jmax i cm 200 a gate?emitter voltage v ge 20 v v transient gate?emitter voltage (t pulse = 5 s, d < 0.10) 30 power dissipation @ t c = 25 c @ t c = 100 c p d 536 268 w operating junction temperature range t j ?55 to +175 c storage temperature range t stg ?55 to +175 c lead temperature for soldering, 1/8 from case for 5 seconds t sld 260 c stresses exceeding those listed in the maximum ratings table may damage the device. if any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. to?247 case 340ar 4 lead 75 a, 650 v v cesat = 1.70 v e on = 0.61 mj device package shipping ordering information NGTB75N65FL2WAG to?247 (pb?free) 30 units / rai l www. onsemi.com marking diagram g e c e1 75n65fl2 = specific device code a = assembly location y = year ww = work week g = pb?free package 75n65fl2 aywwg c e e1 g
NGTB75N65FL2WAG www. onsemi.com 2 thermal characteristics rating symbol value unit thermal resistance junction?to?case, for igbt r jc 0.28 c/w thermal resistance junction?to?case, for diode r jc 0.62 c/w thermal resistance junction?to?ambient r ja 40 c/w electrical characteristics (t j = 25 c unless otherwise specified) parameter test conditions symbol min typ max unit static characteristic collector?emitter breakdown voltage, gate?emitter short?circuited v ge = 0 v, i c = 500 a v (br)ces 650 ? ? v collector?emitter saturation voltage v ge = 15 v, i c = 75 a v ge = 15 v, i c = 75 a, t j = 175 c v cesat 1.50 ? 1.70 2.30 2.00 ? v gate?emitter threshold voltage v ge = v ce , i c = 350 a v ge(th) 4.5 5.5 6.5 v collector?emitter cut?off current, gate? emitter short?circuited v ge = 0 v, v ce = 650 v v ge = 0 v, v ce = 650 v, t j = 175 c i ces ? ? ? 7.0 0.3 ? ma gate leakage current, collector?emitter short?circuited v ge = 20 v , v ce = 0 v i ges ? ? 200 na dynamic characteristic input capacitance v ce = 20 v, v ge = 0 v, f = 1 mhz c ies ? 7200 ? pf output capacitance c oes ? 300 ? reverse transfer capacitance c res ? 200 ? gate charge total v ce = 480 v, i c = 75 a, v ge = 15 v q g ? 310 ? nc gate to emitter charge q ge ? 60 ? gate to collector charge q gc ? 160 ? switching characteristic, inductive load turn?on delay time t j = 25 c v cc = 400 v, i c = 75 a r g = 10 v ge = 15 v t d(on) ? 23 ? ns rise time t r ? 50 ? turn?off delay time t d(off) ? 157 ? fall time t f ? 55 ? turn?on switching loss e on ? 0.61 ? mj turn?off switching loss e off ? 1.2 ? total switching loss e ts ? 1.81 ? turn?on delay time t j = 175 c v cc = 400 v, i c = 75 a r g = 10 v ge = 15 v t d(on) ? 28 ? ns rise time t r ? 50 ? turn?off delay time t d(off) ? 172 ? fall time t f ? 90 ? turn?on switching loss e on ? 0.85 ? mj turn?off switching loss e off ? 1.8 ? total switching loss e ts ? 2.65 ? diode characteristic forward voltage v ge = 0 v, i f = 75 a v ge = 0 v, i f = 75 a, t j = 175 c v f 1.50 ? 2.30 2.50 2.90 ? v reverse recovery time t j = 25 c i f = 75 a, v r = 200 v di f /dt = 200 a/ s t rr ? 90 ? ns reverse recovery charge q rr ? 0.40 ? c reverse recovery current i rrm ? 7.0 ? a reverse recovery time t j = 175 c i f = 75 a, v r = 200 v di f /dt = 200 a/ s t rr ? 173 ? ns reverse recovery charge q rr ? 1.47 ? c reverse recovery current i rrm ? 13 ? a product parametric performance is indicated in the electrical characteristics for the listed test conditions, unless otherwise noted. product performance may not be indicated by the electrical characteristics if operated under different conditions.
NGTB75N65FL2WAG www. onsemi.com 3 typical characteristics 8 v 7 v 9 v figure 1. output characteristics figure 2. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 7 6 5 4 3 2 1 0 0 20 40 60 80 100 7 6 5 4 3 2 1 0 0 20 40 60 100 figure 3. output characteristics figure 4. output characteristics v ce , collector?emitter voltage (v) v ce , collector?emitter voltage (v) 7 6 5 4 3 2 1 0 0 20 40 60 100 7 6 5 4 3 2 1 0 0 20 40 60 100 figure 5. typical transfer characteristics figure 6. v ce(sat) vs. t j v ge , gate?emitter voltage (v) t j , junction temperature ( c) 14 12 10 6 4 2 0 0 20 40 60 80 100 175 125 75 25 ?25 ?75 1.0 1.4 2.0 2.2 i c , collector current (a) i c , collector current (a) i c , collector current (a) i c , collector current (a) i c , collector current (a) v ce , collector?emitter voltage (v) 8 11 v 10 v 8 v 7 v t j = 25 c v ge = 20 v ? 15 v 11 v 10 v 9 v 8 v 7 v t j = 150 c v ge = 20 v ? 15 v 11 v 10 v 9 v 7 v and 8 v t j = ?55 c v ge = 20 v ? 13 v 11 v 10 v 9 v t j = 175 c v ge = 20 v ? 15 v 8 80 8 80 8 80 t j = 25 c t j = 175 c 8 i c = 75 a 1.2 1.6 i c = 50 a i c = 25 a ?50 0 200 150 100 50 16 120 140 160 120 140 160 13 v 120 160 140 120 160 140 13 v 2.4 180 200 13 v 180 200 200 180 200 180 120 140 160 180 200 1.8
NGTB75N65FL2WAG www. onsemi.com 4 typical characteristics figure 7. typical capacitance figure 8. diode forward characteristics v ce , collector?emitter voltage (v) v f , forward voltage (v) 90 80 60 50 40 20 10 0 10 100 1k 3.0 2.5 2.0 1.5 1.0 0.5 0 0 10 30 40 60 70 80 100 figure 9. typical gate charge figure 10. switching loss vs. temperature q g , gate charge (nc) t j , junction temperature ( c) 350 200 150 50 0 0 2 6 8 10 14 16 180 140 120 100 60 40 20 0 0.4 1.0 1.2 1.6 1.8 figure 11. switching time vs. temperature figure 12. switching loss vs. ic t j , junction temperature ( c) i c , collector current (a) 180 160 120 100 60 40 20 0 1 10 100 1000 150 130 110 90 70 50 30 10 0 4 6 capacitance (pf) i f , forward current (a) v ge , gate?emitter voltage (v) switching loss (mj) switching time (ns) switching loss (mj) 30 70 100 t j = 25 c c oes c ies c res 20 50 90 t j = 25 c t j = 175 c 4 12 v ce = 480 v v ge = 15 v i c = 75 a 80 160 200 v ce = 400 v v ge = 15 v i c = 75 a rg = 10 e off e on v ce = 400 v v ge = 15 v t j = 175 c rg = 10 e off e on 170 3 80 140 200 v ce = 400 v v ge = 15 v i c = 75 a rg = 10 t d(off) t d(on) t r t f 3.5 4.0 100 250 300 0.6 10k 100k 1 2 5 0.8 1.4
NGTB75N65FL2WAG www. onsemi.com 5 typical characteristics figure 13. switching time vs. ic figure 14. switching loss vs. r g i c , collector current (a) r g , gate resistor ( ) 150 130 110 90 70 50 30 10 1 10 100 1000 60 50 40 70 30 20 10 0 0 2 4 6 8 10 figure 15. switching time vs. r g figure 16. switching loss vs. v ce r g , gate resistor ( ) v ce , collector?emitter voltage (v) 60 70 50 40 30 20 10 0 10 100 1000 550 500 450 400 300 250 200 150 0 1.0 1.5 2.0 figure 17. switching time vs. v ce v ce , collector?emitter voltage (v) 500 450 400 350 300 250 200 150 10 100 1000 switching time (ns) switching loss (mj) switching time (ns) switching loss (mj) switching time (ns) v ce = 400 v v ge = 15 v t j = 175 c rg = 10 e off e on t d(off) t d(on) t r t f 170 v ce = 400 v v ge = 15 v t j = 175 c i c = 75 a 12 350 600 e off e on v ge = 15 v t j = 175 c i c = 75 a rg = 10 v ce = 400 v v ge = 15 v t j = 175 c i c = 75 a t d(off) t d(on) t r t f v ge = 15 v t j = 175 c i c = 75 a rg = 10 t d(off) t d(on) t r t f 550 2.5 figure 18. safe operating area v ce , collector?emitter voltage (v) 1k 100 10 1 0.1 100 1000 i c , collector current (a) 10k 600 10 1 50 s 100 s 1 ms dc operation single nonrepetitive pulse t c = 25 c curves must be derated linearly with increase in temperature 3.0 0.5
NGTB75N65FL2WAG www. onsemi.com 6 typical characteristics figure 19. reverse bias safe operating area figure 20. t rr vs. di f /dt v ce , collector?emitter voltage (v) di f /dt, diode current slope (a/ s) 1k 100 10 1 1 10 100 1000 900 700 1300 500 300 100 50 70 figure 21. q rr vs. di f /dt figure 22. i rm vs. di f /dt di f /dt, diode current slope (a/ s) di f /dt, diode current slope (a/ s) 900 1300 700 500 300 100 0 900 700 300 100 0 20 40 50 figure 23. v f vs. t j t j , junction temperature ( c) 100 75 50 25 0 ?25 ?50 ?75 1.00 2.00 i c , collector current (a) t rr , reverse recovery time (ns) q rr , reverse recovery charge ( c) i rm , reverse recovery current (a) v f , forward voltage (v) 90 500 1300 150 110 30 200 v ge = 15 v, t c = 175 c t j = 25 c, i f = 75 a t j = 175 c, i f = 75 a t j = 25 c, i f = 75 a t j = 175 c, i f = 75 a t j = 25 c, i f = 75 a t j = 175 c, i f = 75 a 1.0 2.5 2.0 i f = 75 a i f = 50 a i f = 25 a 1.50 125 175 2.50 3.00 v r = 400 v v r = 400 v v r = 400 v 1100 130 150 1100 0.5 1100 3.0 1.5 10 1.25 2.25 1.75 2.75
NGTB75N65FL2WAG www. onsemi.com 7 typical characteristics figure 24. collector current vs. switching frequency 0.01 0.1 1 10 100 1000 frequency (khz) ipk (a) 150 125 100 75 50 25 0 ramp, t c = 80 c ramp, t c = 110 c square, t c = 80 c square, t c = 110 c 225 200 175 figure 25. igbt transient thermal impedance pulse time (sec) r(t), square?wave peak ( c/w) figure 26. diode transient thermal impedance pulse time (sec) 50% duty cycle 20% 10% 5% 2% single pulse 50% duty cycle 20% 10% 5% 2% single pulse 0.0001 0.01 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 r jc = 0.28 0.001 0.1 1 0.000001 0.00001 0.0001 0.001 0.01 0.1 1 r jc = 0.62 junction case c 1 c 2 r 1 r 2 r n duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n c i (j/w) 0.0033 0.0172 0.0392 0.0590 0.0886 0.7735 r i ( c/w) 0.0301 0.0184 0.0255 0.0536 0.1129 0.0409 0.001 r(t), square?wave peak ( c/w) junction case c 1 c 2 r 1 r 2 r n duty factor = t 1 /t 2 peak t j = p dm x z jc + t c c n c i (j/w) 0.000125 0.000951 0.002753 0.003765 0.006647 0.009699 r i ( c/w) 0.007994 0.010512 0.011485 0.026558 0.047571 0.103104 0.051480 0.152673 0.234748 0.654533 0.061427 0.065499 0.134709 0.152781 0.01
NGTB75N65FL2WAG www. onsemi.com 8 figure 27. test circuit for switching characteristics figure 28. definition of turn on waveform
NGTB75N65FL2WAG www. onsemi.com 9 figure 29. definition of turn off waveform
NGTB75N65FL2WAG www. onsemi.com 10 package dimensions to?247 4?lead case 340ar issue o e2 d l b e 0.25 m ba m c a1 a 124 b e 4x a seating plane notes: 1. dimensioning and tolerancing per asme y14.5m, 1994. 2. controlling dimension: millimeters. 3. dimensions d and e do not include mold flash. mold flash shall not exceed 0.13 per side. these dimen- sions are measured at the outermost extreme of the plastic body. 4. lead finish is uncontrolled in the region defined by l1. 5. dimension a1 to be measured in the region defined by l1. 6. notches are required but their shape is optional. 7. diameter ? p shall have a maximum draft angle of 3.5 to the top of the part with a maximum diameter of 4.20. dim min max millimeters d 20.80 21.10 e 15.75 16.13 a 4.83 5.21 b 1.10 1.30 e 2.54 bsc a1 2.29 2.54 c 0.50 0.70 l 19.90 20.30 q 5.59 6.20 e1 13.06 13.46 p 3.50 3.70 s 6.15 bsc d1 16.25 17.65 note 5 q note 3 note 6 note 3 l1 4.00 4.40 p1 7.00 7.40 d1 3 b2 b2 1.30 1.50 e2 4.32 4.83 p1 0.635 m ba m p e1 s l1 note 4 note 7 4x e 2x on semiconductor and the are registered trademarks of semiconductor components industries, llc (scillc) or its subsidia ries in the united states and/or other countries. scillc owns the rights to a number of pa tents, trademarks, copyrights, trade secret s, and other intellectual property. a listin g of scillc?s product/patent coverage may be accessed at www.onsemi.com/site/pdf/patent?marking.pdf. scillc reserves the right to make changes without further notice to any product s herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any part icular purpose, nor does sci llc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. ?typi cal? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating param eters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the right s of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgic al implant into the body, or other applications intended to s upport or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer s hall indemnify and hold scillc and its officers , employees, subsidiaries, affiliates, and dist ributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufac ture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. p ublication ordering information n. american technical support : 800?282?9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81?3?5817?1050 ngtb75n65fl2wa/d literature fulfillment : literature distribution center for on semiconductor 19521 e. 32nd pkwy, aurora, colorado 80011 usa phone : 303?675?2175 or 800?344?3860 toll free usa/canada fax : 303?675?2176 or 800?344?3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your loc al sales representative
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